Computers, smartphones, tablets, gaming systems. In a short period of time — in some cases, a span of just a couple of years — we’ve gone from marveling at these devices to demanding that companies make them better, faster, more portable. Research from a team of scientists at the University of Nebraska could give the people what they want, and then some. Their work has the potential to significantly improve the speed, capacity and dependability of device memory through the use of what are called “ferroelectric tunnel junctions.” As explained by Dr. Alexei Gruverman, a Nebraska physics professor and co-author
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